? 2015 ixys corporation, all rights reserved v ces = 650v i c110 = 15a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 2.5v t fi(typ) = 28ns ds100575b(02/15) extreme light punch through igbt for 20-60khz switching symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 10 ? a t j = 150 ? c 400 ? a i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 15a, v ge = 15v, note 1 1.96 2.50 v t j = 150 ? c 2.45 v symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 38 a i c110 t c = 110c 15 a i f110 t c = 110c 23 a i cm t c = 25c, 1ms 80 a i a t c = 25c 5 a e as t c = 25c 100 mj ssoa v ge = 15v, t vj = 150c, r g = 20 ? i cm = 30 a (rbsoa) clamped inductive load @v ce ? v ces t sc v ge = 15v, v ce = 360v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 200 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-220) 1.13/10 nm/lb.in f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb weight to-263 2.5 g to-220 3.0 g xpt tm 650v igbt genx3 tm w/diode ixya15n65c3d1 IXYP15N65C3D1 features ? optimized for 20-60khz switching ? square rbsoa ? avalanche rated ? anti-parallel fast diode ? short circuit capability ? international standard packages advantages ? high power density ? extremely rugged ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts ? high frequency power inverters preliminary technical information g = gate c = collector e = emitter tab = collector to-263 aa (ixya) g c e to-220ab (ixyp) g e c (tab) c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixya15n65c3d1 IXYP15N65C3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 15a, v ce = 10v, note 1 5.0 8.5 s c ie s 583 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 52 pf c res 13 pf q g(on) 19 nc q ge i c = 15a, v ge = 15v, v ce = 0.5 ? v ces 4 nc q gc 10 nc t d(on) 15 ns t ri 20 ns e on 0.27 mj t d(off) 68 ns t fi 28 ns e of f 0.23 0.40 mj t d(on) 15 ns t ri 21 ns e on 0.53 mj t d(off) 80 ns t fi 42 ns e off 0.24 mj r thjc 0.75 c/w r thcs to-220 0.50 c/w inductive load, t j = 25c i c = 15a, v ge = 15v v ce = 400v, r g = 20 ? note 2 inductive load, t j = 150c i c = 15a, v ge = 15v v ce = 400v, r g = 20 ? note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v f i f = 10a, v ge = 0v, note 1 3.0 v t j = 125 ? c 1.7 v i rm 2.5 a t rr 110 ns t rr 30 ns r thjc 1.85 c/w i f = 12a, v ge = 0v, -di f /dt = 100a/ s, v r = 100v, t j = 125c i f = 1a, v ge = 0v, -di f /dt = 100a/ s, v r = 30v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 to-263 outline 1. gate 2. collector 3. emitter 4. collector bottom side to-220 outline pins: 1 - gate 2,4 - collector 3 - emitter
? 2015 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 30 00.511.522.533.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 7v 9v 11v 8v fig. 2. extended output characteristics @ t j = 25oc 0 10 20 30 40 50 60 70 0 5 10 15 20 25 30 v ce - volts i c - amperes v ge = 15v 8v 9v 11v 13v 12v 14v 10v fig. 3. output characteristics @ t j = 150oc 0 5 10 15 20 25 30 00.511.522.533.544.5 v ce - volts i c - amperes v ge = 15v 14v 13v 12v 10v 9v 11v 8v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 15a i c = 7.5a i c = 30a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1 2 3 4 5 6 7 8 8 9 10 11 12 13 14 15 v ge - volts v ce - volts 30a t j = 25oc 15a i c = 7.5a fig. 6. input admittance 0 5 10 15 20 25 30 35 40 5678910111213 v ge - volts i c - amperes t j = 150oc 25oc - 40oc ixya15n65c3d1 IXYP15N65C3D1
ixys reserves the right to change limits, test conditions, and dimensions. ixya15n65c3d1 IXYP15N65C3D1 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 9 10 11 0 5 10 15 20 25 30 35 i c - amperes g f s - siemens t j = - 40oc 150oc 25oc v ce = 10v fig. 10. reverse-bias safe operating area 0 5 10 15 20 25 30 35 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 20 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 2 4 6 8 101214161820 q g - nanocoulombs v ge - volts v ce = 325v i c = 15a i g = 10ma fig. 9. capacitance 10 100 1,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
? 2015 ixys corporation, all rights reserved fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.2 0.4 0.6 0.8 1.0 20 30 40 50 60 70 80 90 100 r g - ohms e off - millijoules 0 1 2 3 4 5 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 15a i c = 30a fig. 15. inductive turn-off switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 20 30 40 50 60 70 80 90 100 r g - ohms t f i - nanoseconds 40 60 80 100 120 140 160 180 200 220 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 15a i c = 30a fig. 13. inductive switching energy loss vs. collector current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 8 1012141618202224262830 i c - amperes e off - millijoules 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 e on - millijoules e off e on - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 15a i c = 30a fig. 16. inductive turn-off switching times vs. collector current 15 20 25 30 35 40 45 50 55 8 1012141618202224262830 i c - amperes t f i - nanoseconds 40 50 60 70 80 90 100 110 120 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 50 55 60 65 70 75 80 85 90 t d(off) - nanoseconds t f i t d(off) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 30a i c = 15a ixya15n65c3d1 IXYP15N65C3D1
ixys reserves the right to change limits, test conditions, and dimensions. ixya15n65c3d1 IXYP15N65C3D1 ixys ref: ixy_15n65c3(31)7-30-13-a fig. 21. maximum transient thermal impedance for diode 0.1 1 10 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 21. maximum transient impedance for diode 3 fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 60 8 1012141618202224262830 i c - amperes t r i - nanosecond s 10 12 14 16 18 20 22 t d(on) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 13 14 15 16 17 18 19 t d(on) - nanoseconds t r i t d(on) - - - - r g = 20 ? , v ge = 15v v ce = 400v i c = 30a i c = 15a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 90 100 r g - ohms t r i - nanosecond s 0 10 20 30 40 50 60 70 80 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 15a i c = 30a
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